SST89E52RC芯片解密/SST89E54RC芯片解密

SST89E52RC芯片解密/SST89E54RC芯片解密是橙盒科技在SST系列单片机解密、IC解密技术研究中近期取得技术突破的典型IC芯片型号，针对SST系列单片机解密，橙盒科技专门进行了长达两个月的技术攻关研究，其中涉及简单型单片机的低成本解密方案研究和高难度芯片破解研究，目前，该攻关项目已经取得系列突破，即日起可面向广大客户提供SST系列多种型号IC芯片解密服务。

有SST89E52RC芯片解密/SST89E54RC芯片解密需求者欢迎与橙盒科技联系咨询更多解密详情，这里，我们仅提供对SST89E52RC / SST89E54RC芯片的简单介绍，供客户及解密工程师参考借鉴。

    SST89E52RC / SST89E54RC芯片简介：

The SST89E52RC / SST89E54RC are members of the FlashFlex family of 8-bit microcontroller products designed and manufactured with SST’s patented and proprietary SuperFlash CMOS semiconductor process technology.The split-gate cell design and thick-oxide tunneling injector offer significant cost and reliability benefits for our customers.The devices use the 8051 instruction set and are pinfor-pin compatible with standard 8051 microcontroller devices.

　　The device comes with 17/9 KByte of on-chip flash EEPROM program memory which is divided into 2 independent program memory partitions. The primary partition occupies 16/8 KByte of internal program memory space and the secondary partition occupies 1 KByte of internal program memory space.

　　The flash memory can be programmed via a standard 87C5x OTP EPROM programmer fitted with a special adapter and firmware for SST’s devices. During power-on reset, the devices can be configured as either a slave to an external host for source code storage or a master to an external host for an in-system programming (ISP) operation.

　　The devices are designed to be programmed in-system on the printed circuit board for maximum flexibility. An example of the bootstrap loader (BSL) in memory, demonstrating initial user program code loading or subsequent user code updating via an ISP operation, is provided on the SST website. The sample BSL is for the user’s reference only; SST does not guarantee its functionality.

　　In addition to 17/9 KByte of SuperFlash EEPROM program memory on-chip and 512 x8 bits of on-chip RAM, the device can address up to 64 KByte of external program memory and up to 64 KByte of external RAM.The highly-reliable, patented SST SuperFlash technology and memory cell architecture have a number of important advantages for designing and manufacturing flash EEPROMs. These advantages translate into significant cost and reliability benefits for our customers.